| PART |
Description |
Maker |
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMR290XN |
N-channel uTrenchMOS extremely low level FET
|
Philips Semiconductors
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| PMF280UN |
N-channel UTrenchMOS ultra low level FET
N-channel uTrenchmos (tm) ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD400UN |
Dual N-channel uTrenchMOS ultra low level FET
|
Philips Semiconductors
|
| RKP402KS |
Dual N-channel uTrenchmos (tm) ultra low level FET
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| PMV60EN PMV60EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
3M SCOTCHCAST ELECTRICAL RESIN 5 (16 1-LB UNITS = CARTON) RoHS Compliant: Yes
UTrenchMOS enhanced logic level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STFI11N65M2 STF11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
